Effects of Ba substitution on stability and electronic structure of perovskite CaMnO3 oxide
Creators
- 1. School of Materials Sciences and Engineering, Shijiazhuang Tiedao University, Shijiazhuang (China)
- 2. Henan Provincial Engineering Laboratory of Building-Photovoltaics, Institute of Sciences, Henan University of Urban Construction, Pingdingshan (China)
- 3. Department of Physics and Electronic Engineering, Guangxi Normal University for Nationalities, Chongzuo (China)
- 4. Anhui Provincial Key Laboratory of Advanced Functional Materials and Devices, College of Materials Science and Engineering, Hefei University of Technology, Hefei (China)
Description
The stability and electronic structure of the heavy element Ba substituted perovskite type oxide CaMnO3 have been studied by the psudo-potential approximation density functional theory calculation method. The results show that the lattice distortion has been induced by Ba substitution and the distortion is anisotropic. The Ba substituted perovskite type oxide CaMnO3 exhibits semiconductor character and the stability decreases. The indirect band gap has been remained by Ba substitution for Ca site for the perovskite type oxide CaMnO3 yet, the band gaps of the spin up electrons and the spin down electrons have been slightly decreased to 0.659 eV and 0.655 eV, respectively. The semiconductor to conductor transition has also been found. The electrons of the Ba substituted perovskite type oxide CaMnO3 form energy bands near -37.5 eV, -18 eV, -16 eV, -5 eV ∼ 0 eV and 1 eV, and the peak values of the density of states curve decreases along with the energy regions of -18 eV, -16 eV and -0.7 eV. The dispersion characters of the bands within the valance bands and the conduction bands are much different, which indicate their diverse effective mass. The Mn p, O p and the Mn d electrons have contribution to the density of states at the Fermi level, these electrons determine the conduction process of the titled oxide materials. (authors)
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Atomic and Molecular Physics
- Journal Volume
- 35.0
- Journal Issue
- 6
- Journal Page Range
- p. 1020-1028
- ISSN
- 1000-0364
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 54104672
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; BARIUM; DENSITY OF STATES; DIAGRAMS; EFFECTIVE MASS; ELECTRONIC STRUCTURE; ELECTRONS; FERMI LEVEL; OXIDES; PEROVSKITE; SEMICONDUCTOR MATERIALS; SPIN; STABILITY
- Descriptors DEC
- ALKALINE EARTH METALS; ANGULAR MOMENTUM; CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; INFORMATION; LEPTONS; MASS; MATERIALS; METALS; MINERALS; OXIDE MINERALS; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PEROVSKITES
Optional Information
- Notes
- 11 figs., 2 tabs., 19 refs.; http://dx.doi.org/10.3969/j.issn.1000-0364.2018.06.022