High efficiency superconducting field effect devices for oxide electronic applications

We present a study of the efficiency of LaAlO₃/SrTiO₃ nanoscale field effect devices realized in the side gate configuration. We show that a change in the resistance of more than four orders of magnitude and a voltage gain of up to 50 can be obtained with the application of a gate voltage smaller than 1V. At dilution temperatures, the nanodevices become superconducting and we demonstrate the possibility to obtain a superconductor to insulator transition by applying only 200 mV. These results are discussed in the view of applications for quantum electronics. (paper)