Published 1988 | Version v1
Book Metadata-only

Quench protection of persistent current switches using diodes in cryogenic temperature

Creators

  • 1. Central Research Lab., Mitsubishi Electric Corp., 8-1-1, Tsukaguchi-honmachi, Amagasaki, Hyogo 661 (Japan)

Description

Transient characteristics of power diodes in cryogenic temperature and their application to the protection of persistent current switch (PCS) in the superconducting magnet systems are presented. The observed forward voltage drop was 9V at 4.2K and was 6 times larger than that at room temperature. The voltage was quickly reduced to 1V after the diode was turned on. Transition time was less than 1 msec. The PCS which has a normal state resistance of 1.5 ohm could be protected by the diodes from the quenching

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
Proceedings of the 19th (1988) annual IEEE power electronics specialists conference
Journal Page Range
p. 321-325.

Conference

Title
19. annual IEEE power electronics specialists conference.
Dates
11-14 Apr 1988.
Place
Kyoto (Japan).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20056998
Subject category
S42: ENGINEERING; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYOGENICS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; EQUIPMENT PROTECTION DEVICES; POWER SYSTEMS; QUENCHING; SUPERCONDUCTING MAGNETS; SWITCHING CIRCUITS; SWITCHING DIODES; VOLTAGE REGULATORS
Descriptors DEC
ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETS; ELECTRONIC CIRCUITS; EQUIPMENT; HEAT TREATMENTS; MAGNETS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SUPERCONDUCTING DEVICES