Compound formation and silicon behavior in titanium and tantalum layered aluminum films
- 1. Semiconductor Process and Design Center, Texas Instruments, Inc., P.O. Box 225621, M.S. 944, Dallas, TX (USA)
Description
Thin film interaction in the material systems of titanium and tantalum-layered Al- 1% Si films has been studied using advanced material characterization techniques. Compound phase formation was analyzed based on results from X-ray diffraction analysis. Al3Ti was identified in the titanium-layered film after 4500C sintering. TaSi2 and unreacted Ta. however, were identified after the sintering. Silicon participated in the phase formation process by incorporating itself as a solute in the Al3Ti while transforming Ta into its silicide. This behavior is to be interpreted based on available ternary phase diagrams. Cross-sectional transmission electron microscopy results indicate that well defined layered films and columnar grains of aluminum were obtained which are believed to be the primary reasons for the observed electromigration improvement over the base metal
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-19-7
- Imprint Title
- Thin films: Interfaces and phenomena
- Journal Page Range
- vp.
Conference
- Title
- interfaces and phenomena.
- Acronym
- Thin films
- Dates
- 2-6 Dec 1985.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20029139
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; CROSS SECTIONS; ELECTRON MICROSCOPY; ELECTROPHORESIS; PHASE DIAGRAMS; PHASE TRANSFORMATIONS; SILICON; TANTALUM; THIN FILMS; TITANIUM; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIAGRAMS; DIFFRACTION; ELEMENTS; FILMS; INFORMATION; METALS; MICROSCOPY; SCATTERING; SEMIMETALS; TRANSITION ELEMENTS