Reversible changes of hydrogen donors electron structures of crystalline silicon

Fourier transformation infrared (FTIR) studies of proton-implanted silicon were performed in the temperature range 8 K to 300 K. Samples were annealed at 400-450 deg. C and subsequently were heat-treated at a temperature range of 70-300 deg. C with following quenching to room temperature in water. FTIR data taken at near-liquid He temperatures reveal that well-known higher-order IR bands related to <100> self-interstitials are quenching depending in proton-implanted silicon and their behavior correlated with the behavior of far IR absorption lines associated with hydrogen-related shallow donor nanoclusters. (author)