Development of CAICISS (Coaxial Impact-Collision Ion Scattering Spectroscopy) equipment and its application

CAICISS (Coaxial Impact-Collision Ion Scattering Spectroscopy) equipment, with which surface structures can be analyzed quantitatively by taking the experimental scattering angle to be just 180deg, has been developed. CAICISS has several interesting advantages. For example, CAICISS can be attached to any kinds of surface analysis equipments or thin-film production devices through a single port directed toward the sample position. Moreover, CAICISS is suitable for in situ observation of various surface processes (e.g. atomic-layer epitaxial growth at semiconductor surfaces) because of its geometrical simplicity. Especially, CAICISS can be a useful tool to monitor and control the growing process of subatomic or three-dimensional atomic layers in the VLSI production processes. In this paper, we will describe the designing of CAICISS for sale taking account of these advantages, and its applications of recent experiments and computer simulation. (author)