Published 1999 | Version v1
Miscellaneous

Change of valence for active and nonactive ions in oxide monocrystals applied in optoelectrical devices

  • 1. Instytut Optoelektroniki, WAT, Warsaw (Poland)
  • 2. Instytut Fizyki, PAN, Warsaw (Poland)
  • 3. Instytut Technologii Materialow Elektronicznych, Warsaw (Poland)
  • 4. Instytut Problemow Jadrowych im. Soltana, Swierk (Poland)

Description

Results of phase transition investigations of YVO4:Nd single crystal (vanadium in 5+ valency state) to YVO3:Nd crystal (V3+) as an effect of annealing of YVO4:Nd single crystal in hydrogen at 1200oC for 1h were presented. The refined lattice parameters obtained for the latter case, ao=5.2858(1) A; bo=5.5956(2) A and co=7.5824(2) A, are slightly larger only than those of YVO3. Valency change was also investigated for Cr ions due to transmission (Cr4+ → Cr3+) in Y3AL5O12:Cr laser single crystal and for Co, due to transition (Co2+ → Co3+) in LaGaO3 single crystal under influence of annealing in reducing and oxidizing atmospheres and gamma and proton radiations. (author)

Part of:
Communications of 6. Symposium of Laser Technique

Additional details

Additional titles

Original title (Polish)
Zmiana walencyjnosci jonow aktywnych i nieaktywnych w monokrysztalach tlenkowych stosowanych w urzadzeniach laserowych
Augmented title (English)
YVO_4:Nd; Y_3AL_5O_1_2:Cr

Publishing Information

ISBN
83-87423-38-6
Imprint Title
Communications of 6. Symposium of Laser Technique
Imprint Pagination
461 p.
Journal Page Range
p. 67-71

Conference

Title
6. Symposium of Laser Technique
Original Conference Title
6. Sympozjum Techniki Laserowej
Dates
27 Sep - 1 Oct 1999
Place
Szczecin-Swinoujscie (Poland)

Optional Information

Notes
8 refs, 3 figs Imprint:Komunikaty 6. Sympozjum Techniki Laserowej