Published January 2007
| Version v1
Journal article
Unselective regrowth buried heterostructure long-wavelength superluminescent diode realized with MOVPE
Creators
- 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. School of Physics, Peking University, Beijing 100871 (China)
Description
A novel unselective regrowth buried heterostructure (BH) long-wavelength superluminescent diode (SLD), which has a grade-strained bulk InGaAs active region, was developed by metalorganic vapor-phase epitaxy (MOVPE). The 3 dB emission spectrum bandwidth of the SLD is about 65 nm with the range from 1596 to 1661 nm at 90 mA and from 1585 to 1650 nm at 150 mA.An output power of 3.5 mW is obtained at 200 mA injection current under CW operation at room temperature
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2006.01.077;
- PII
- S0022-2313(06)00080-9;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 122-123
- Journal Page Range
- p. 176-178
- ISSN
- 0022-2313
- CODEN
- JLUMA8
Conference
- Title
- 2005 international conference on luminescence and optical spectroscopy of condensed matter
- Acronym
- ICL'05
- Dates
- 25-29 Jul 2005
- Place
- Beijing (China)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38034812
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BEAM CURRENTS; CRYSTAL GROWTH; EMISSION SPECTRA; LIGHT EMITTING DIODES; VAPOR PHASE EPITAXY; WAVELENGTHS
- Descriptors DEC
- CRYSTAL GROWTH METHODS; CURRENTS; EPITAXY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTRA
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.