Published 2021 | Version v1
Journal article Metadata-only

The effect of γ-irradiation on the volt-ampere characteristics (VAC) of GaS monocrystal doped with Yb

Creators

  • 1. Institute of Radiation Problems of ANAS, Baku (Azerbaijan)

Description

The effect of γ-quanta on the volt-ampere characteristics of GaS layered single crystal, pure and alloyed with Yb has been studied at 300K temperature. It was obtained that, the increase in current in the ohmic region at radiation doses Φ<50 krad is due to the annihilation of the inter nodal additive Yb ion with VGa and the sharp increase in current in high electric fields is due to thermo ionization of local levels and as a result of dissociation of the (VGa IYb) complex at radiation doses Φ>100 krad, an increase in the concentration of free charge carriers is observed.

Additional details

Publishing Information

Journal Title
Journal of Radiation Researches
Journal Volume
8
Journal Issue
2
Journal Page Range
p. 60-64
ISSN
2312-3001

INIS

Country of Publication
Azerbaijan
Country of Input or Organization
Azerbaijan
INIS RN
53092336
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABUNDANCE; ADDITIVES; ALLOYS; ANNIHILATION; BORON COMPLEXES; CHARGE CARRIERS; CONCENTRATION RATIO; CURRENTS; DISSOCIATION; DOPED MATERIALS; ECOLOGICAL CONCENTRATION; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GAMMA RADIATION; IONIZATION; IRRADIATION; MONOCRYSTALS; RADIATION DOSES; YTTERBIUM IONS
Descriptors DEC
CHARGED PARTICLES; COMPLEXES; CRYSTALS; DIMENSIONLESS NUMBERS; DOSES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; INTERACTIONS; IONIZING RADIATIONS; IONS; MATERIALS; PARTICLE INTERACTIONS; PHYSICAL PROPERTIES; RADIATIONS

Optional Information

Notes
2 figs.; 6 refs.