Uniform formation of high-density InAs quantum dots by InGaAs capping growth
Creators
- 1. Department of Electronic Engineering, University of Electro-Communications, 1-5-1 Chougaoka, Chofu, Tokyo 182-8585 (Japan)
Description
We studied the capping growth process of an InGaAs on high-density InAs/GaAs(001) quantum dots (QDs) with a bimodal size distribution grown by molecular beam epitaxy. Atomic force microscopy and reflection high energy electron beam diffraction observations revealed that the bimodal size distribution is composed of larger QDs with (110) facets and smaller QDs with (136) facets. In addition, it was found that, during the InGaAs capping growth, the height of larger QDs decreased, while the height of smaller QDs increased due to the incorporation of indium adatoms. As a result, the size fluctuation of the QDs was suppressed as compared to GaAs capping growth. We achieved a narrow photoluminescence (PL) linewidth of 24 meV and an enhanced PL peak intensity
Additional details
Identifiers
- DOI
- 10.1063/1.2975366;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 104
- Journal Issue
- 5
- Journal Page Range
- p. 054909-054909.4
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40056860
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; DIFFRACTION; ELECTRON BEAMS; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; BEAMS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LEPTON BEAMS; LUMINESCENCE; MATERIALS; MICROSCOPY; NANOSTRUCTURES; PARTICLE BEAMS; PHOTON EMISSION; PNICTIDES; SCATTERING
Optional Information
- Notes
- (c) 2008 American Institute of Physics