Published December 1989
| Version v1
Journal article
Ion induced charge collection in GaAs MESFETs
Creators
- 1. Naval Research Lab, Washington, DC (USA)
- 2. Martin-Mariettta, Denver, CO (USA)
- 3. Martin-Marietta, Baltimore, MD (USA)
- 4. Vanderbilt Univ., Nashville, TN (USA)
Description
Charge collection measurements on GaAs MESFET test structures demonstrate that more charge can be collected at the gate than is deposited in the active layer and more charge can be collected at the drain than the total amount of charge produced by the ion. Enhanced charge collection at the gate edge is also observed. The current transients produced by the energetic ions have been measured directly with about 20 picosecond resolution
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 36
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 2292-2299
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- 26. annual conference on nuclear and space radiation effects.
- Dates
- 25-29 Jul 1989.
- Place
- Marco Island, FL (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21054377
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE COLLECTION; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDES; IONS; RADIATION HARDENING; TRANSIENTS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; GALLIUM COMPOUNDS; HARDENING; PHYSICAL RADIATION EFFECTS; PNICTIDES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-890723--.