Defect formation in silicon at high temperature of irradiation

Changes in concentration and lifetimes of nonquilibrium charge carriers in n- and p-type silicon have been investigated under irradiation by electrons with the energy of 1.7 MeV in the temperature range 20-600 deg C and under subsequent annealing up to approximat 600 deg C. An essential effect of the irradiation temperature on the rate defect centre implantation and on the character of the subsequent annealing has been observed. Mobility changes in p-type silicon irradiated at 600 deg C, increase in the fraction of stable defects with the irradiation temperature and some other effects are revealed. An analogy is given to the behaviour of germanium and the results obtained are explained taking account of known complexes of defects