Published 1975 | Version v1
Journal article

Contributions to the investigation of transport phenomena in amorphous semiconductors

Description

The paper presents the amorphous semiconductors, the experimental investigation of transport phenomena in thin amorphous layers, the theoretical investigation of a model of conduction on localized states at low electric fields, the interpretation of the experimental results at low fields for a-Ge and a-Si, the theoretical investigation of the non-ohmic conduction in a-Ge and a-Si, and the discussion of the results for chalcogenides glasses. (C.M.)

Additional details

Additional titles

Original title (Romanian)
Contributii la studiul fenomenelor de transport in semiconductori amorfi

Publishing Information

Journal Title
Stud. Cercet. Fiz.
Journal Volume
27
Journal Issue
2
Series
Stud. Cercet. Fiz.
Journal Page Range
117-152

Optional Information

Notes
Summary form only.