Published 1975
| Version v1
Journal article
Contributions to the investigation of transport phenomena in amorphous semiconductors
Description
The paper presents the amorphous semiconductors, the experimental investigation of transport phenomena in thin amorphous layers, the theoretical investigation of a model of conduction on localized states at low electric fields, the interpretation of the experimental results at low fields for a-Ge and a-Si, the theoretical investigation of the non-ohmic conduction in a-Ge and a-Si, and the discussion of the results for chalcogenides glasses. (C.M.)
Additional details
Additional titles
- Original title (Romanian)
- Contributii la studiul fenomenelor de transport in semiconductori amorfi
Publishing Information
- Journal Title
- Stud. Cercet. Fiz.
- Journal Volume
- 27
- Journal Issue
- 2
- Series
- Stud. Cercet. Fiz.
- Journal Page Range
- 117-152
INIS
- Country of Publication
- Romania
- Country of Input or Organization
- Romania
- INIS RN
- 7231726
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GERMANIUM; SEMICONDUCTOR MATERIALS; SILICON; TRANSPORT THEORY
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; SEMIMETALS
Optional Information
- Notes
- Summary form only.