Impurities effect on electrodiffusion fracture of thin metal films

Retarding effects of impurities on electrodiffusion in fine metal films is explained. A criteria of the choice of alloying component retarding electrodiffusion in fine-film samples is formulated. It is shown that retarding effect of impurities on electrodiffusion in fine-film conductors is in the interaction of additions with crystal structure defects of fine film (mainly with grain boundaries) at the expense of elastic, chemical and electric interaction, which leads to the decrease of surface energy of grain boundaries, i.e. crystal structure of fine film is improving: grains become larger or primary orientation of grains in any crystallographical direction appears. Solubility of addition in matrix in solid state, atom size and crystal structure of addition material should be taken into consideration while choosing alloying component retarding electrodiffusion in fine-film conductor