Acoustic conversion of quantum states in semiconductors

The interaction between solitary strain pulse (acoustic soliton) and localized holes in silicon-based nanostructures is studied theoretically. It is shown that the acoustic soliton propagating through the hole localization area changes the hole state to that with a different projection of angular momentum. The microscopic mechanism of the effect is related to the valence band splitting by local elastic strain. We have studied such a state conversion for holes in a quantum dot or localized at acceptors in a quantum well. It is shown that the strain amplitude required for the complete switching of the hole state corresponds to strain pulses studied experimentally.