Study of the radiation effect on the high definition television camera image device to be installed in the international space station Japan experiment module (JEM)

Semiconductor devices on the electronic board assembled in the on-board control system of the Space station are influenced by space radiation environment, such as high-energy trapped proton and high-energy heavy ions. To study radiation effect of high-energy ions on semiconductor devices, we applied Heavy Ion Medical Accelerator in Chiba (HIMAC) as the test bed. We tested charge-coupled device (CCD), several types of image devices and high-density electrical devices, such as dynamic random access memory (DRAM), under high-energy ion beams. We irradiated proton, helium, carbon and silicon ion to estimate radiation damage on the image devices and DRAM. (author)