X-ray photoemission study of Nb/Si interface

This paper present depth profile measurement carried out on Nb/Si multilayers using X- ray photoelectron spectroscopy (XPS) technique, The survey scans of as deposited sample shows peak mainly due to Si, C-1s and O- ls. The sputtering treatment shows evolution of buried Nb peak with reduction in Si peak intensities. Corresponding core level measurements show binding energy (B. E) shift in Si-2p peak and Nb-3d peak along with an asymmetry towards higher B.E. side in their peak shapes, Observed results are discussed and interpreted in terms of the formation of NbSi2 phase at the interface during deposition. (author)