Published June 1, 2019 | Version v1
Journal article Metadata-only

AlGaInAs/InP semiconductor lasers with an increased electron barrier

Creators

  • 1. OJSC M.F. Stel'makh Polyus Research Institute, ul. Vvedenskogo 3/1, 117342 Moscow (Russian Federation)

Description

This paper presents an experimental study of AlGaInAs/InP semiconductor lasers with different barrier layers. The use of strained layers with an increased band gap as blocking barriers limiting carrier leakage is shown to increase the output power of the lasers at a given pump current. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1070/QEL17032

Additional details

Identifiers

DOI
10.1070/QEL17032;

Publishing Information

Journal Title
Quantum Electronics (Woodbury, N.Y.)
Journal Volume
49
Journal Issue
6
Journal Page Range
p. 519-521
ISSN
1063-7818
CODEN
QUELEZ

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52045282
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; ELECTRONS; INDIUM PHOSPHIDES; LASERS; PUMPING; SEMICONDUCTOR MATERIALS
Descriptors DEC
ELEMENTARY PARTICLES; FERMIONS; INDIUM COMPOUNDS; LEPTONS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES