Study on the phosphorus distribution profiles in silicon in ion implantation

Profiles of distribution of implanted phosphorus atoms with 1.0, 3.0, 10 and 20 keV energy and charge carriers concentrations in silicon have been studied. Experimental values of model, mean-projective paths, root-mean-square deviation implantation profile asymmetry are comparied with the calculation. It is shown that the discrepancy between the experimental and theoretical values of distribution moments reduces with ion energy increase. The dependence of electric properties of implanted layers, on the dose of implanted ions and annealing temperature is studied. The investigation results are used for creating charged particle detectors and ohmic contacts with low annealing temperature