Change of electrical conductivity of MoS₂ under exposure to protons

A significant drop (by a factor of 10,000) in the electrical resistance of the thin-film semiconductor MoS₂ with continuous injection of protons into it under conditions of established dynamic equilibrium was found. With the cessation of proton injection, the effect disappears. These films MoS₂ were obtained on polished glass supports by means of mechanical infriction of powder into a rough surface. In order to create a permanent proton flow directed to the sample plasma ion source with cold cathode was used. (paper)