Published January 6, 2014
| Version v1
Journal article
Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Creators
- 1. Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)
- 2. Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork (Ireland)
Description
Diffusion of indium through HfO2 after post deposition annealing in N2 or forming gas environments is observed in HfO2/In0.53Ga0.47As stacks by low energy ion scattering and X-ray photo electron spectroscopy and found to be consistent with changes in interface layer thickness observed by transmission electron microscopy. Prior to post processing, arsenic oxide is detected at the surface of atomic layer deposition-grown HfO2 and is desorbed upon annealing at 350 °C. Reduction of the interfacial layer thickness and potential densification of HfO2, resulting from indium diffusion upon annealing, is confirmed by an increase in capacitance
Additional details
Identifiers
- DOI
- 10.1063/1.4860960;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 1
- Journal Page Range
- p. 011601-011601.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45078326
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ARSENIC OXIDES; DIFFUSION; HAFNIUM OXIDES; INDIUM; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ARSENIC COMPOUNDS; CHALCOGENIDES; ELECTRON MICROSCOPY; ELEMENTS; HAFNIUM COMPOUNDS; HEAT TREATMENTS; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC