Published September 2007 | Version v1
Journal article

Enhanced extrinsic magnetoresistance in La2/3Sr1/3MnO3 artificial grain boundaries induced by ion implantation

  • 1. Institute of Information Functional Materials, Hebei University of Technology, Tianjin 300130 (China)
  • 2. Beijing Jingyi Century Automatic Equipment Co. Ltd, Beijing 100078 (China)
  • 3. National Laboratory for Superconductivity, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080 (China)
  • 4. Laboratory of Microfabrication, Institute of Physics and Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080 (China)

Description

The resistance of polycrystalline divalent-ion-doped LaMnO3 has been shown to be highly sensitive to low magnetic fields. To enable direct study of the properties of isolated grain boundaries, we developed a new method to form artificial boundaries in manganite thin films. Metal slits about 70nm in width were printed by 30KV focused Ga ion beam nanolithography on a 4μmLa2/3Sr1/3MnO3 bridge, and the materials in these slits were then irradiated by accelerated H2+ ions. Using this method, magnetoresistance (MR) >8% and >16% were, respectively, obtained at 150 and at 10K in a magnetic field of 1T. This technique is very promising in terms of its simplicity and flexibility of fabrication and has the potential for high-density integration

Additional details

Identifiers

DOI
10.1016/j.jmmm.2007.02.207;
PII
S0304-8853(07)00077-7;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
316
Journal Issue
1
Journal Page Range
p. L1-L4
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.