Published 1998
| Version v1
Miscellaneous
The surface properties of InGaAs containing QW structures on GaAs substrate
Creators
- 1. Instytut Technologii Materialow Elektronicznych, Warsaw (Poland)
- 2. Zaklad Fizyki Ciala Stalego, Polska Akademia Nauk, Zabrze (Poland)
Description
no abstract available
Additional details
Publishing Information
- ISBN
- 83-901181-0-6
- Imprint Title
- Abstracts of International Conference on Solid State Crystals - Materials Science and Applications
- Imprint Pagination
- 268 p.
- Journal Page Range
- p. 105
Conference
- Title
- International Conference on Solid State Crystals - Materials Science and Applications
- Dates
- 12-16 Oct 1998
- Place
- Zakopane (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 31044401
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIDES; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LATTICE PARAMETERS; MEETINGS; QUANTUM MECHANICS; SILICON; SUBSTRATES; SURFACE PROPERTIES; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; FILMS; GALLIUM COMPOUNDS; MECHANICS; MICROSCOPY; PNICTIDES; SEMIMETALS