Published November 1, 2017
| Version v1
Journal article
XPS Depth Profiling of Air-Oxidized Nanofilms of NbN on GaN Buffer-Layers
Creators
- 1. National Research University "Moscow Power Engineering Institute", Moscow, 111250 (Russian Federation)
- 2. Chalmers University of Technology, Göteborg, 41296 (Sweden)
Description
XPS depth chemical and phase profiling of an air-oxidized niobium nitride thin film on a buffer-layer GaN is performed. It is found that an intermediate layer of Nb5N6 and NbONx under the layer of niobium oxide is generated. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/917/9/092001Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 917
- Journal Issue
- 9
- Journal Page Range
- [6 p.]
- ISSN
- 1742-6596
Conference
- Title
- 4. International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures
- Acronym
- Saint Petersburg OPEN 2017
- Dates
- 3-6 Apr 2017
- Place
- Saint-Petersburg (Russian Federation)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52061040
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AIR; BUFFERS; GALLIUM NITRIDES; LAYERS; NANOFILMS; NIOBIUM NITRIDES; NIOBIUM OXIDES; OXIDATION; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRON SPECTROSCOPY; FILMS; FLUIDS; GALLIUM COMPOUNDS; GASES; MATERIALS; NANOMATERIALS; NIOBIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PNICTIDES; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; THIN FILMS; TRANSITION ELEMENT COMPOUNDS