Effect of radiation defects on impurity diffusion in silicon

Diffusion of boron, phosphorus, antimony in silicon irradiated by inert gas ions is studied. The irradiation doses varied from 6x1012 to 6x1015 cm-2. The diffusion of impurities was carried out in the temperature range of 700-1200 deg C. The diffusion acceleration is observed for all impurities if the diffusion depth is comparable with the thickness of a layer damaged by bombardment. The acceleration increases with the dose increase. For diffusion depths which exceed the thickness of the damaged layer the diffusion is slowed down, which is caused by the segregation of impurities on sinks, produced during annealing. The acceleration within the limits of the damaged layer is associated with the presence of the excessive concentration of vacancies appearing during the annealing of complex defects