Ion charge fluctuation effect on a high-energy ion implantation: Boltzmann transport equation-based simulation

The model of high energy ion implantation with taking into account fluctuations of ion charge states and a corresponding transport equation of the Boltzmann type for the flux of penetrating ions is presented. The results of a comparison of experimental data with simulation data based on the numerical method for the forward transport equation solution are treated. It is shown that the charge fluctuations result in an essential range straggling increase for implanted atoms and radiation defects. Such approach gives a better conformity between theory and experiment than conventional methods discussed in the literature