Determination of impurity atom location in crystal materials by the method of channeling ion inverse scattering

Generalization of data available in literature and obtained by authors has showed that in spite of the fact that some of the obtained results correspond to the criteria elaborated for equilibrium systems, the most data on implanted impurity location do not correspond to these criteria. Location of impurity atoms which are not solved in matrice under equilibrium conditions is determined in case of their ion implantation by three processes: spontaneous recombination of impurities with vacancies within the cascade collision relaxation phase, capture of additional vacancies during the cascade cooling phase and capture of migrating vacancies at temperatures higher than that in stage III. 57 refs.; 18 figs.; 6 tables. (author)