Published September 2010 | Version v1
Journal article

A three-dimensional model of electromigration and stress induced void nucleation in interconnect structures

  • 1. Division of Engineering, Brown University, Providence, RI 02912 (United States)
  • 2. Design and Technology Solutions, Intel Corporation 2200 Mission College Blvd., Santa Clara, CA 95052 (United States)

Description

A three-dimensional finite element method is developed to predict the critical conditions necessary to nucleate electromigration or stress induced voids in interconnects. Our approach is to model interfaces using a modified cohesive zone, which permits the interfaces to separate at a critical stress, and also accounts for mass transport along the interfaces. A simple boundary value problem is solved to verify the numerical procedure. The method is then used to simulate the nucleation and initial growth of voids in a realistic interconnect test structure. Predicted void nucleation sites are in good agreement with experimental observations. In addition, modeling analysis is also consistent with qualitative effects of geometric and material parameters such as the line length, cap layer and passivation material on critical times to nucleate voids

Availability note (English)

Available from http://dx.doi.org/10.1088/0965-0393/18/6/065006

Additional details

Identifiers

DOI
10.1088/0965-0393/18/6/065006;
PII
S0965-0393(10)50306-1;

Publishing Information

Journal Title
Modelling and Simulation in Materials Science and Engineering
Journal Volume
18
Journal Issue
6
Journal Page Range
[20 p.]
ISSN
0965-0393

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45005164
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTROPHORESIS; FINITE ELEMENT METHOD; INTERFACES; LAYERS; NUCLEATION; SIMULATION; STRESSES
Descriptors DEC
CALCULATION METHODS; MATHEMATICAL SOLUTIONS; NUMERICAL SOLUTION