Published May 19, 2003
| Version v1
Journal article
Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration
Creators
- 1. Department of Nano Science and Technology, University of Seoul, Seoul (Korea, Republic of)
- 2. Department of Physics, Kyunghee University, Seoul (Korea, Republic of)
- 3. Department of Chemistry, Kyunghee University, Seoul (Korea, Republic of)
- 4. Department of Chemical and Biological Engineering, Korea University, Seoul (Korea, Republic of)
Description
We have fabricated Er-doped amorphous SiOx films by laser ablation of a Si:Er2O3 target in He atmosphere. The photoluminescence intensity at 1.54 μm was highly dependent on the oxygen content in the film, which turned out to be changed significantly by the ambient He pressure. Also, we have adopted time-of-flight quadrupole mass spectroscopy to obtain kinetic energies of ionic species in a plume produced by laser ablation. Si and Er ions do not overlap spatially as they expand toward the Si substrate and Er ions impinge on the preformed SiOx layer
Additional details
Identifiers
- DOI
- 10.1063/1.1573335;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 20
- Journal Page Range
- p. 3436-3438
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35037700
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ABUNDANCE; AMORPHOUS STATE; CHEMICAL ANALYSIS; DEPOSITION; ERBIUM; LASERS; MASS SPECTROSCOPY; OXYGEN; PHOTOLUMINESCENCE; SILICON OXIDES; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TIME-OF-FLIGHT MASS SPECTROMETERS
- Descriptors DEC
- CHALCOGENIDES; DYNAMIC MASS SPECTROMETERS; ELEMENTS; EMISSION; FILMS; LUMINESCENCE; MASS SPECTROMETERS; MEASURING INSTRUMENTS; METALS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; RARE EARTHS; SILICON COMPOUNDS; SPECTROMETERS; SPECTROSCOPY; TIME-OF-FLIGHT SPECTROMETERS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.