Published May 19, 2003 | Version v1
Journal article

Er3+ photoluminescence from Er-doped amorphous SiOx films prepared by pulsed laser deposition at room temperature: The effects of oxygen concentration

  • 1. Department of Nano Science and Technology, University of Seoul, Seoul (Korea, Republic of)
  • 2. Department of Physics, Kyunghee University, Seoul (Korea, Republic of)
  • 3. Department of Chemistry, Kyunghee University, Seoul (Korea, Republic of)
  • 4. Department of Chemical and Biological Engineering, Korea University, Seoul (Korea, Republic of)

Description

We have fabricated Er-doped amorphous SiOx films by laser ablation of a Si:Er2O3 target in He atmosphere. The photoluminescence intensity at 1.54 μm was highly dependent on the oxygen content in the film, which turned out to be changed significantly by the ambient He pressure. Also, we have adopted time-of-flight quadrupole mass spectroscopy to obtain kinetic energies of ionic species in a plume produced by laser ablation. Si and Er ions do not overlap spatially as they expand toward the Si substrate and Er ions impinge on the preformed SiOx layer

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
82
Journal Issue
20
Journal Page Range
p. 3436-3438
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2003 American Institute of Physics.