Published February 2006
| Version v1
Journal article
Ferroelectricity down to at least 2 nm in multiferroic BiFeO3 epitaxial thin films
Creators
- 1. Unite Mixte de Physique CNRS-Thales, Palaiseau (France)
- 2. Institut d'Electronique Fondamentale, Universite Paris-Sud, Orsay (France)
Description
We report here on the preservation of ferroelectricity down to 2 nm in BiFeO3 ultrathin films. The electric polarization can be switched reversibly and is stable over several days. Our findings insight on the fundamental problem of ferroelectricity at low thickness and confirm the potential of BiFeO3 as a lead-free ferroelectric and multiferroic material for nanoscale devices. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 2, Letters and Express Letters
- Journal Volume
- 45
- Journal Issue
- 4-7
- Journal Page Range
- p. L187-L189
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 37067662
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; DEPOSITION; EPITAXY; FERROELECTRIC MATERIALS; IRON OXIDES; LASER RADIATION; LATTICE PARAMETERS; LEAD IONS; MICROSCOPES; PIEZOELECTRICITY; POLARIZATION; SUBSTRATES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIELECTRIC MATERIALS; DIFFRACTION; DIMENSIONS; ELECTRICITY; ELECTROMAGNETIC RADIATION; FILMS; IONS; IRON COMPOUNDS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 22 refs., 3 figs.