Published 2008 | Version v1
Journal article Metadata-only

Structural, optical, and electrical characterizations of epitaxial lifted-off InGaAs/InAlAs metamorphic heterostructures bonded on AlN ceramic substrates

Creators

  • 1. Center for Nano Materials and Technology, Japan Advanced Institute of Science and Technology (JAIST) 1-1 Asahidai, Nomi-shi, Ishikawa (Japan)

Description

We investigated epitaxial lift-off (ELO) of In0.57Ga0.43As/In0.56Al0.44As metamorphic high electron mobility heterostructures and their van der Waals bonding (VWB) on AlN ceramic substrates. Structural, optical, and electrical characterizations were carried out for samples obtained by ELO and VWB, in comparison with on-wafer counterparts before ELO. We confirmed a strain release after ELO and VWB from X-ray diffraction, and observed a consequent photoluminescence energy shift. The ELO samples exhibit very high electron mobilities owing to the high indium contents and successful ELO and VWB processes. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssc.200779267

Additional details

Identifiers

DOI
10.1002/pssc.200779267;

Publishing Information

Journal Title
Physica Status Solidi. C, Conferences
Journal Volume
5
Journal Issue
9
Journal Page Range
p. 2787-2790
ISSN
1610-1634

Conference

Title
34. International symposium on compound semiconductors (ISCS-2007)
Dates
15-18 Oct 2007
Place
Kyoto (Japan)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39082800
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM ARSENIDES; ALUMINIUM NITRIDES; CERAMICS; CRYSTAL LATTICES; ELECTRIC CONDUCTIVITY; ELECTRON DENSITY; ELECTRON MOBILITY; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INFRARED SPECTRA; LATTICE PARAMETERS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SPECTRAL SHIFT; STRAINS; SUBSTRATES; TEMPERATURE RANGE 0000-0013 K; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; VAN DER WAALS FORCES; X-RAY DIFFRACTION
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFRACTION; ELECTRICAL PROPERTIES; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MOBILITY; NITRIDES; NITROGEN COMPOUNDS; PARTICLE MOBILITY; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 5 figs., 9 refs.. SICI: 1610-1634(200807)5:9<2787::AID-PSSC200779267>3.0.TX;2-W