Dynamic Tuning of Gap Plasmon Resonances Using a Solid-State Electrochromic Device
Creators
- 1. Stanford University, CA (United States). Dept. of Materials Science and Engineering
- 2. Sandia National Laboratory (SNL-CA), Livermore, CA (United States)
- 3. Stanford University, CA (United States). Geballe Laboratory for Advanced Materials
Description
Plasmonic antennas and metasurfaces can effectively control light–matter interactions, and this facilitates a deterministic design of optical materials properties, including structural color. However, these optical properties are generally fixed after synthesis and fabrication, while many modern-day optics applications require active, low-power, and nonvolatile tuning. These needs have spurred broad research activities aimed at identifying materials and resonant structures capable of achieving large, dynamic changes in optical properties, especially in the challenging visible spectral range. In this work, we demonstrate dynamic tuning of polarization-dependent gap plasmon resonators that contain the electrochromic oxide WO3. Its refractive index in the visible changes continuously from n = 2.1 to 1.9 upon electrochemical lithium insertion and removal in a solid-state device. By incorporating WO3 into a gap plasmon resonator, the resonant wavelength can be shifted continuously and reversibly by up to 58 nm with less than 2 V electrochemical bias voltage. Lastly, the resonator can remain in a tuned state for tens of minutes under open circuit conditions.
Availability note (English)
Available from https://www.osti.gov/servlets/purl/1570265; https://www.osti.gov/biblio/1570265; DOE Accepted Manuscript full text, or the publishers Best Available Version will be available free of charge after the embargo periodAdditional details
Additional titles
- Augmented title (English)
- KEYWORDS: GAP PLASMON; DYNAMIC TUNING; OPTICAL PROPERTIES; NANOPHOTONICS
Identifiers
Publishing Information
- Journal Title
- Nano Letters
- Journal Volume
- 19
- Journal Issue
- 11
- Journal Page Range
- p. 7988-7995
- ISSN
- 1530-6984
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 53046643
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ELECTROCHROMISM; OPTICS; PLASMONS; REFRACTIVE INDEX; RESONANCE; RESONATORS; SYNTHESIS; TUNGSTATES; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMISTRY; ELECTRONIC EQUIPMENT; ELECTRO-OPTICAL EFFECTS; EQUIPMENT; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; QUASI PARTICLES; REFRACTORY METAL COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC04-94AL85000
- Funding organization
- USDOE Office of Science - SC, Basic Energy Sciences (BES) (United States); USDOE National Nuclear Security Administration (NNSA) (United States)
- Secondary number(s)
- OSTIID--1570265