Published August 2010
| Version v1
Journal article
Energy selective scanning electron microscopy to reduce the effect of contamination layers on scanning electron microscope dopant mapping
- 1. Department of Engineering Materials, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)
- 2. FEI Electron Optics, Achtseweg Noord 5, Acht, 5600 KA Eindhoven (Netherlands)
- 3. Universita di Trento, via Mesiano 77, I-38123 Trento (Italy)
- 4. Interdisciplinary Laboratory for Computational Science (LISC), FBK and University of Trento, via Sommarive 18, Povo, I-38123 Trento (Italy)
Description
We demonstrate that energy selective scanning electron microscopy can lead to substantial dopant contrast and resolution improvements (compared to standard SEM) when the energy selection is carried out based on Monte Carlo modelled secondary electron spectra in combination with detector transfer modelling.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.ultramic.2010.04.008Additional details
Identifiers
- DOI
- 10.1016/j.ultramic.2010.04.008;
- PII
- S0304-3991(10)00116-6;
Publishing Information
- Journal Title
- Ultramicroscopy (Amsterdam)
- Journal Volume
- 110
- Journal Issue
- 9
- Journal Page Range
- p. 1185-1191
- ISSN
- 0304-3991
- CODEN
- ULTRD6
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44102946
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- COMPUTERIZED SIMULATION; DOPED MATERIALS; ELECTRON SPECTRA; LAYERS; MAPPING; MONTE CARLO METHOD; RESOLUTION; SCANNING ELECTRON MICROSCOPY; SILICON
- Descriptors DEC
- CALCULATION METHODS; ELECTRON MICROSCOPY; ELEMENTS; MATERIALS; MICROSCOPY; SEMIMETALS; SIMULATION; SPECTRA
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.