Modeling the compositional instability in wurtzite Ga1-xInxN
- 1. COMP/Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 Espoo (Finland)
- 2. RRC Kurchatov Institute, Kurchatov Square 1, 123182 Moscow (Russian Federation)
Description
The paper deals with multiscale modeling of the minor component ordering in wurtzite Ga1-xInxN (x<0.5) alloys. The treatment combines the total-energy density-functional calculations of the metal atom interaction parameters and the atomistic description of the alloy decomposition using lattice kinetic Monte Carlo. It is demonstrated that the phase decomposition patterns in wurzite GaInN are very sensitive to the interplay of metal atom interactions at several interatomic distances (at least to the fourth nearest neighbors) on the cation sublattice. Variation of the metal interaction energies within reasonable limits resulted in pronouncedly different relaxation patterns (linear or wall ordering of In and Ga atoms along c-axis, planar ordering parallel to basal plane, spinodal decomposition). The high sensitivity of the GaInN decomposition to relatively small variations of the metal interaction energies could be the main reason for the experimentally observed versatility of the alloy decomposition patterns and their sensitivity to the particular experimental conditions
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 77
- Journal Issue
- 7
- Journal Page Range
- p. 075207-075207.13
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40023003
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALLOYS; ATOMS; CATIONS; CRYSTAL STRUCTURE; DECOMPOSITION; DENSITY FUNCTIONAL METHOD; ENERGY DENSITY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INSTABILITY; INTERACTIONS; INTERATOMIC DISTANCES; MONTE CARLO METHOD; NITROGEN COMPOUNDS; ORDER-DISORDER TRANSFORMATIONS; RELAXATION; SEMICONDUCTOR MATERIALS; SENSITIVITY; SIMULATION; VARIATIONS
- Descriptors DEC
- CALCULATION METHODS; CHARGED PARTICLES; CHEMICAL REACTIONS; DISTANCE; IONS; MATERIALS; PHASE TRANSFORMATIONS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2008 The American Physical Society