Published November 2011 | Version v1
Journal article

Very high residual resistivity ratios of heteroepitaxial superconducting niobium films on MgO substrates

  • 1. Alameda Applied Sciences Corporation (AASC), San Leandro, CA 94577 (United States)
  • 2. Thomas Jefferson National Accelerator Facility (Jefferson Lab), Newport News, VA 23606 (United States)
  • 3. Norfolk State University (NSU), Norfolk, VA 23504 (United States)

Description

We report residual resistivity ratio (RRR) values (up to RRR-541) measured in thin film Nb grown on MgO crystal substrates, using a vacuum arc discharge, whose 60-160 eV Nb ions drive heteroepitaxial crystal growth. The RRR depends strongly upon substrate annealing and deposition temperatures. X-ray diffraction spectra and pole figures reveal that, as the crystal structure of the Nb film becomes more ordered, RRR increases, consistent with fewer defects or impurities in the lattice and hence longer electron mean free path. A transition from Nb(110) to purely Nb(100) crystal orientation on the MgO(100) lattice occurs at higher temperature.

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-2048/24/11/115002

Additional details

Identifiers

DOI
10.1088/0953-2048/24/11/115002;
PII
S0953-2048(11)95378-0;

Publishing Information

Journal Title
Superconductor Science and Technology
Journal Volume
24
Journal Issue
11
Journal Page Range
[6 p.]
ISSN
0953-2048
CODEN
SUSTEF