Peculiarities of diamond film synthesis in the DC flow discharge

Results of studies on the growth kinetics of diamond films in a dc glow discharge on modernized equipment have been presented. It was shown that on a substrate holder with a diameter of 41 mm and at zero substrate potential the maximum growth rate of a diamond film per unit of electric power introduced into the discharge is achieved with a high uniformity of film deposition. The growth rate was 2.5 μm/h at a power of 3.5 kW, which is 1.5-2 times less than in the device with an isolated substrate holder. It was established that the structural quality of the obtained diamond films was not inferior, and in some cases exceeds the results of earlier studies. Thus, it was shown that due to the change in the design scheme of activation of the gaseous medium, it was possible to synthesize diamond films with high characteristics and with a significant reduction in energy costs.