Published February 9, 2004
| Version v1
Journal article
Carbon nanotube field emitter arrays having an electron beam focusing structure
Creators
- Choi, Jun Hee1, 2, 3
- Zoulkarneev, Andrei R.1, 2, 3
- Jin, Yong Wan1, 2, 3
- Park, Young Jun1, 2, 3
- Chung, Deuk Seok1, 2, 3
- Song, Byung Kwon1, 2, 3
- Han, In Taek1, 2, 3
- Lee, Hang Woo1, 2, 3
- Park, Sang Hyun1, 2, 3
- Kang, Ho Suk1, 2, 3
- Kim, Ha Jong1, 2, 3
- Kim, Jung Woo1, 2, 3
- Jung, Jae Eun1, 2, 3
- Kim, Jong Min1, 2, 3
- Baek, Hong Gu1, 2, 3
- Yu, Se Gi1, 2, 3
- 1. Department of Physics, Hankuk University of Foreign Studies, Yongin 449-791 (Korea, Republic of)
- 2. Department of Metallurgical System Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of)
- 3. FED Project Team, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600 (Korea, Republic of)
Description
An electron beam focusing structure was incorporated into the gated field emitter arrays where the emitters were screen-printed carbon nanotubes. The focusing structure was comprised of 8-μm-thick bulky SiOx focus gate insulator and Cr focus gate, and exhibited negligible leakage between the gate and the focus gate. In current-voltage measurements, it is found that the anode current strongly depends on both the focus gate and the anode bias voltages. Electron beams were focused well at the anode with a slight overfocusing effect, which is due to the wide electron beam divergence from carbon nanotubes. A new focusing structure based on the simulation is proposed to overcome the overfocusing
Additional details
Identifiers
- DOI
- 10.1063/1.1645315;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 84
- Journal Issue
- 6
- Journal Page Range
- p. 1022-1024
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36028004
- Subject category
- S43: PARTICLE ACCELERATORS;
- Descriptors DEI
- ANODES; BEAM OPTICS; CARBON; CHROMIUM; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON BEAMS; FOCUSING; NANOTUBES; SILICON OXIDES; SIMULATION
- Descriptors DEC
- BEAMS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTRODES; ELEMENTS; LEPTON BEAMS; METALS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2004 American Institute of Physics.