Published January 2008 | Version v1
Journal article

The effect of 60Co (γ-ray) irradiation on the electrical characteristics of Au/SnO2/n-Si (MIS) structures

  • 1. Physics Department, Faculty of Arts and Sciences, Gazi University, 06500 Teknikokullar, Ankara (Turkey)

Description

The effect of 60Co (γ-ray) irradiation on the electrical properties of Au/SnO2/n-Si (MIS) structures has been investigated using the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements in the frequency range 1 kHz to 1 MHz at room temperature. The MIS structures were exposed to γ-rays at a dose rate of 2.12 kGy/h in water and the range of total dose was 0-500 kGy. It was found that the C-V and G/ω-V curves were strongly influenced with both frequency and the presence of the dominant radiation-induced defects, and the series resistance was increased with increasing dose. Also, the radiation-induced threshold voltage shift (ΔVT) strongly depended on radiation dose and frequency, and the density of interface states Nss by Hill-Coleman method decreases with increasing radiation dose

Availability note (English)

Available from http://dx.doi.org/10.1016/j.radphyschem.2007.02.006

Additional details

Identifiers

DOI
10.1016/j.radphyschem.2007.02.006;
PII
S0969-806X(07)00038-2;

Publishing Information

Journal Title
Radiation Physics and Chemistry (1993)
Journal Volume
77
Journal Issue
1
Journal Page Range
p. 74-78
ISSN
0969-806X
CODEN
RPCHDM

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.