Published August 2007 | Version v1
Journal article

Microcavity modified spontaneous emission of single quantum dots

  • 1. Ginzton Laboratory, Stanford University, Stanford, CA 94305 (United States)
  • 2. Joint Quantum Institute, National Institute of Standards and Technology, and University of Maryland, Gaithersburg, MD 20899 (United States)
  • 3. Currently at Argonne National Laboratories, Argonne, Il (United States)
  • 4. National Institute of Informatics, Hitotsubashi, Chiyoda-ku, Tokyo 101-8430 (Japan)

Description

We summarize our earlier research showing how the radiative properties of an individual InAs quantum dot exciton state can be altered by their spatial and spectral position with respect to a discrete semiconductor microcavity mode. The InAs quantum dot is formed epitaxially in GaAs, and the microcavity is processed from a one-wavelength distributed Bragg reflector planar microcavity of GaAs and AlAs to form a sub-micrometer diameter pillar. Two states are tuned through a discrete cavity mode through sample temperature changes and show a spontaneous emission enhancement of 4. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200675619

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
244
Journal Issue
8
Series
Special issue: Frontiers in molecular-beam epitaxy toward novel devices
Journal Page Range
p. 2792-2802
ISSN
0370-1972
CODEN
PSSBBD

INIS

Optional Information

Notes
With 8 figs., 29 refs.. SICI: 0370-1972(200708)244:8<2792::AID-PSSB200675619>3.0.TX;2-A