Published February 2010 | Version v1
Journal article

Study of ZrO2/Al2O3/ZrO2 and Al2O3/ZrO2/Al2O3 stack structures deposited by sol-gel method on Si

  • 1. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia (Bulgaria)
  • 2. Four Dimensions, Inc. Hayward, CA. USA (United States)

Description

Based on our previous experience with pseudobinary alloys of (Al2O3)x(ZrO2)1-x as high-k materials and passivating coatings for solar cells, stack systems of ZrO2/Al2O3/ZrO2and Al2O3/ZrO2/Al2O3, deposited by simple and low cost sol-gel technology have been studied. The thin films of ZrO2 and Al2O3 were sequentially obtained on Si substrates including spin coating deposition from stable solutions. High resolution scanning electron microscopy (HRSEM) was used to compare the morphology of the nanolaminates. The layers were optically characterized by UV-VIS spectrophotometry. The electrical measurements were carried out on metal-insulator-semiconductor (MIS) structures. Their leakage current and relative permittivity were determined.

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/8/1/012027

Additional details

Identifiers

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
8
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1757-899X

Conference

Title
Symposium G - Fundamentals and technology of multifunctional oxide thin films
Acronym
E-MRS 2009 spring meeting
Dates
8-12 Jun 2009
Place
Strasbourg (France)