Pulsing frequency induced change in optical constants and dispersion energy parameters of WO3 films grown by pulsed direct current magnetron sputtering
Creators
- 1. Department of Physics, Alagappa University, Karaikudi 630 004 (India)
- 2. Directorate of Distance Education, Alagappa University, Karaikudi 630 004 (India)
- 3. Department of Physics, Alagappa Chettiar College of Engineering and Technology, Karaikudi 630 004 (India)
Description
In this work, we present the pulsing frequency induced change in the structural, optical, vibrational, and luminescence properties of tungsten oxide (WO3) thin films deposited on microscopic glass and fluorine doped tin oxide (SnO2:F) coated glass substrates by pulsed dc magnetron sputtering technique. The WO3 films deposited on SnO2:F substrate belongs to monoclinic phase. The pulsing frequency has a significant influence on the preferred orientation and crystallinity of WO3 film. The maximum optical transmittance of 85% was observed for the film and the slight shift in transmission threshold towards higher wavelength region with increasing pulsing frequency revealed the systematic reduction in optical energy band gap (3.78 to 3.13 eV) of the films. The refractive index (n) of films are found to decrease (1.832 to 1.333 at 550 nm) with increasing pulsing frequency and the average value of extinction coefficient (k) is in the order of 10−3. It was observed that the dispersion data obeyed the single oscillator of the Wemple-Didomenico model, from which the dispersion energy (Ed) parameters, dielectric constants, plasma frequency, oscillator strength, and oscillator energy (Eo) of WO3 films were calculated and reported for the first time due to variation in pulsing frequency during deposition by pulsed dc magnetron sputtering. The Eo is change between 6.30 and 3.88 eV, while the Ed varies from 25.81 to 7.88 eV, with pulsing frequency. The Raman peak observed at 1095 cm−1 attributes the presence of W-O symmetric stretching vibration. The slight shift in photoluminescence band is attributed to the difference in excitons transition. We have made an attempt to discuss and correlate these results with the light of possible mechanisms underlying the phenomena
Additional details
Identifiers
- DOI
- 10.1063/1.4869209;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 115
- Journal Issue
- 11
- Journal Page Range
- p. 113512-113512.11
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45092419
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DIRECT CURRENT; DOPED MATERIALS; EXCITONS; FLUORINE COMPOUNDS; FREQUENCY DEPENDENCE; GLASS; GRAIN ORIENTATION; LANGMUIR FREQUENCY; MONOCLINIC LATTICES; OSCILLATOR STRENGTHS; PERMITTIVITY; PHOTOLUMINESCENCE; REFRACTIVE INDEX; SPUTTERING; SUBSTRATES; THIN FILMS; TIN OXIDES; TUNGSTEN OXIDES; VISIBLE RADIATION
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CURRENTS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; EMISSION; FILMS; HALOGEN COMPOUNDS; LUMINESCENCE; MATERIALS; MICROSTRUCTURE; OPTICAL PROPERTIES; ORIENTATION; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; QUASI PARTICLES; RADIATIONS; REFRACTORY METAL COMPOUNDS; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
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