Published September 2009 | Version v1
Journal article Metadata-only

Mn-AlInN: a new diluted magnetic semiconductor

Creators

  • 1. Quaid-i-Azam University, Advance Materials Physics Laboratory, Physics Department, Islamabad (Pakistan)
  • 2. University of Engineering and Technology, Department of Physics, Lahore (Pakistan)
  • 3. Chinese Academy of Sciences, State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Beijing (China)

Description

Mn ions have been incorporated into MOCVD grown Al1-xInxN/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations revealed the presence of two ferromagnetic transitions: one has Curie points at ∝260 K and the other above room temperature. In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor sub-layers depending on the Mn concentration. The Curie temperature of 260 K is assigned to the layer having lower concentration, whereas Tc above room temperature is assumed to be associated to the layer having higher Mn concentration. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-009-5128-z

Additional details

Identifiers

DOI
10.1007/s00339-009-5128-z;

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
96
Journal Issue
4
Journal Page Range
p. 979-984
ISSN
0947-8396
CODEN
APAMFC

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
40090121
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
ABSORPTION SPECTRA; ALUMINIUM NITRIDES; BAND THEORY; CHEMICAL VAPOR DEPOSITION; COERCIVE FORCE; COMPOSITE MATERIALS; CURIE POINT; DEBYE-SCHERRER METHOD; DOPED MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; ENERGY SPECTRA; ENERGY-LEVEL TRANSITIONS; EXPERIMENTAL DATA; FERROMAGNETISM; GALLIUM NITRIDES; INDIUM NITRIDES; ION IMPLANTATION; LAYERS; MAGNETIC FIELDS; MAGNETIC SEMICONDUCTORS; MAGNETIC SUSCEPTIBILITY; MAGNETIZATION; MANGANESE ADDITIONS; MANGANESE IONS; OPACITY; ORGANOMETALLIC COMPOUNDS; PHASE TRANSFORMATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SELF-DIFFUSION; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA; X-RAY DIFFRACTION
Descriptors DEC
ALLOYS; ALUMINIUM COMPOUNDS; CHARGED PARTICLES; CHEMICAL COATING; COHERENT SCATTERING; DATA; DEPOSITION; DIFFRACTION; DIFFRACTION METHODS; DIFFUSION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; IONS; MAGNETIC PROPERTIES; MAGNETISM; MANGANESE ALLOYS; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMICONDUCTOR MATERIALS; SPECTRA; SPECTROSCOPY; SURFACE COATING; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION TEMPERATURE