Published May 2011
| Version v1
Journal article
Influence of accelerated electron radiation on the photoelectric properties of AlGaAs-GaAs solar cells
- 1. Institute of Radiation Problems (ANAS) (Azerbaijan)
Description
Full Text: The impact of accelerated electrons (4.5 MeV) on the photelectric properties of the solar elements produced on the base of AlGaAs-GaAs was studied. It was revealed that during irradiation photosensitivity decrease in the short-wave region of spectrum and slips down to the long-wave region of spectrum. The parameters of heterojunction (coefficient of perfection betta and saturation current I0) were calculated. It was shown that the radiation defects formed in the upper layer of pAl0.75 Ga0.25As play the main role for the degradation of the energy parameters
Availability note (English)
Available in abstract form only, full text entered in this recordAdditional details
Additional titles
- Original title (Russian)
- Влияние ускоренних йелектронов на фотойелектрические своыства солнечних йелементов на основе AlGaAs-GaAs структур
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk Azerbajdzhanskoj SSR. Seriya Fiziko-Tekhnicheskikh i Matematicheskikh Nauk
- Journal Volume
- 56
- Journal Issue
- 5
- Journal Page Range
- 4 p.
- ISSN
- 0002-3108
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 43043588
- Subject category
- S36: MATERIALS SCIENCE; S14: SOLAR ENERGY;
- Resource subtype / Literary indicator
- Translation
- Descriptors DEI
- ELECTRICAL PROPERTIES; ELECTRONS; ENERGY; HETEROJUNCTIONS; LONG WAVE RADIATION; PHOTOELECTRIC EFFECT; SATURATION; SOLAR CELLS
- Descriptors DEC
- DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; RADIATIONS; RADIOWAVE RADIATION; SEMICONDUCTOR JUNCTIONS; SOLAR EQUIPMENT
Optional Information
- Notes
- Translated from Russian