Published September 2007 | Version v1
Journal article

Electronic transport through Fe/MgO/Fe(1 0 0) tunnel junctions

  • 1. School of Physics, Trinity College, Dublin 2 (Ireland)
  • 2. Seagate Research, Pittsburgh, Pennsylvania 15222 (United States)
  • 3. Seagate Technology, Bloomington, Minnesota 55435 (United States)

Description

The transport properties of Fe/MgO/Fe(1 0 0) tunnel junctions are studied from first principles at finite bias. For parallel alignment of the Fe leads and voltages below 25 mV the current is carried by both majority and minority spins, with the largest contribution coming from the minority. Their transmission is dominated by a sharp resonance through surface states, whose contribution to the current decreases rapidly as the bias increases. The same minority surface state leads to resonant transmission also for the antiparallel alignment of the Fe leads. However, in contrast to the parallel case the resonance is weakly dependent on the bias, leading to a large magnetoresistance at small voltages, which rapidly decreases with increasing voltage and approximately saturates at about 25 mV

Additional details

Identifiers

DOI
10.1016/j.jmmm.2007.03.146;
PII
S0304-8853(07)00499-4;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
316
Journal Issue
2
Journal Page Range
p. 481-483
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
Joint European magnetic symposia
Dates
26-30 Jun 2006
Place
San Sebastian (Spain)

INIS

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.