Enhanced switching performance of resistance random access memories by an inserted copper tellurium layer

In this work, we systematically investigate the effects of the insertion of the solid-state electrolyte material copper–tellurium (CuTe) in resistance random access memory (RRAM). The CuTe layer is inserted as Cu/CuTe/SiO₂/TiN (top-to-bottom) and the device exhibits excellent resistance switching (RS) characteristics such as lower forming bias, a larger memory window and faster RS speed, compared to the Cu/SiO₂/TiN device. This validates the effects of the inserted CuTe layer with a Cu electrode. Furthermore, an additionally fabricated Cu/CuTe/TiN device demonstrates that the CuTe layer can also successfully act as a middle insulator for the RRAM device, based on the obtained experimental results. (paper)