Published May 2004
| Version v1
Journal article
CO+NH3 plasma etching for magnetic thin films
Description
Etching of magnetic thin films has been studied using CO/NH3 plasma with an electron cyclotron resonance plasma source and DC sample bias. Etch rates were proportional to bias power density. The maximum etch rate was 127 nm/min. Both the pressure dependence of Ni-Fe etch rate and the results of appearance mass spectroscopy suggested that the chemical reaction induced by energetic CO molecules enhanced the etch rate
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2003.12.724;
- PII
- S0304885303016998;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 272-276
- Journal Issue
- 6
- Journal Page Range
- p. E1421-E1422
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- International conference on magnetism
- Acronym
- ICM 2003
- Dates
- 27 Jul - 1 Aug 2003
- Place
- Rome (Italy)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36022691
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMMONIA; CARBON MONOXIDE; ELECTRON CYCLOTRON-RESONANCE; ETCHING; MASS SPECTROSCOPY; PLASMA; POWER DENSITY; PRESSURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CARBON COMPOUNDS; CARBON OXIDES; CHALCOGENIDES; CYCLOTRON RESONANCE; FILMS; HYDRIDES; HYDROGEN COMPOUNDS; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; OXIDES; OXYGEN COMPOUNDS; RESONANCE; SPECTROSCOPY; SURFACE FINISHING
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.