Published April 21, 2008 | Version v1
Journal article

Ferroelectricity and negative temperature coefficient of resistance in pulsed-laser-deposited (Pb,Sr)TiO3 films

  • 1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan (China)
  • 2. Department of Materials Science and Engineering, National United University, Miaoli 36003, Taiwan (China)
  • 3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

Description

(Pb,Sr)TiO3 films deposited on Pt/SiO2/Si substrates by pulsed-laser deposition (PLD) at 400 deg. C with oxygen pressures ranging from 50 to 200 mTorr have been investigated. The paraelectricity-to-ferroelectricity transition of films depends on the oxygen pressure during deposition. Films deposited at 200 mTorr exhibit paraelectric-like nature, whereas films deposited at lower pressures present the ferroelectric characteristic. The (Pb,Sr)TiO3 film is found to exhibit a negative temperature coefficient of resistance (NTCR) at the measurement temperature ranging from 30 to 390 deg. C. This work demonstrates that the ferroelectricity/paraelectricity and the temperature coefficient of resistance of (Pb,Sr)TiO3 films could be controlled by oxygen pressures during PLD

Availability note (English)

Available from http://dx.doi.org/10.1088/0022-3727/41/8/085304

Additional details

Identifiers

DOI
10.1088/0022-3727/41/8/085304;
PII
S0022-3727(08)60104-7;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
41
Journal Issue
8
Journal Page Range
[7 p.]
ISSN
0022-3727
CODEN
JPAPBE