Published October 26, 2001
| Version v1
Journal article
Avalanche multiplication of electrons and holes in cadmium telluride
Creators
- 1. Chernovitskij Natsional'nyj Univ. im. Yu. Fed'kovicha, Chernovtsy (Ukraine)
Description
Determination of the ratio of the coefficients of the electrons and holes of the diode structures impact ionization is carried out with the purpose of optimizing the parameters of the avalanche diodes from the cadmium telluride. It is shown experimentally, that the process of the impact ionization in the cadmium telluride is stimulated by holes. The ratio of the coefficients of the holes and electrons impact ionization constitutes ≅ 30-40
Abstract (Russian)
С целью оптимизации параметров лавинных фотодиодов из теллурида кадмия проведено определение отношения коэффициентов ударной ионизации электронов и дырок диодных структур. Экспериментально показано, что процесс ударной ионизации в теллуриде кадмия стимулируется дырками. Отношение коэффициентов ударной ионизации дырок и электронов составляет ≅ 30-40Additional details
Additional titles
- Original title (Russian)
- Лавинное умножение электронов и дырок в теллуриде кадмия
Publishing Information
- Journal Title
- Pis'ma v Zhurnal Tekhnicheskoj Fiziki
- Journal Volume
- 27
- Journal Issue
- 20
- Journal Page Range
- p. 57-60
- ISSN
- 0320-0116
- CODEN
- PZTFDD
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 34045438
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CADMIUM TELLURIDES; CHARGE CARRIERS; ELECTRONS; HOLES; PHOTODIODES; PHOTOIONIZATION; TEMPERATURE RANGE 0273-0400 K; TOWNSEND DISCHARGE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC DISCHARGES; ELEMENTARY PARTICLES; FERMIONS; IONIZATION; LEPTONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; TELLURIDES; TELLURIUM COMPOUNDS; TEMPERATURE RANGE
Optional Information
- Notes
- 6 refs., 2 figs.