Published October 1982 | Version v1
Journal article Metadata-only

Temperature dependence of slow electron diffraction 00-beam intensity from X-cut of alpha-SiO2

Creators

  • 1. Leningradskij Gosudarstvennyj Univ. (USSR)

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Температурная зависимост' интенсивности 00-пучка DMEh от поверхности X-среза α-SiO

Publishing Information

Journal Title
Fiz. Tverd. Tela
Journal Volume
24
Journal Issue
10
Series
Fiz. Tverd. Tela.
Journal Page Range
3164-3166
ISSN
0367-3294

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
14769866
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CRYSTAL-PHASE TRANSFORMATIONS; DEBYE TEMPERATURE; ELECTRON DIFFRACTION; EV RANGE 10-100; HIGH TEMPERATURE; MEDIUM TEMPERATURE; QUARTZ; TEMPERATURE DEPENDENCE; ULTRAHIGH VACUUM
Descriptors DEC
CHALCOGENIDES; COHERENT SCATTERING; DIFFRACTION; ENERGY RANGE; EV RANGE; OXIDES; OXYGEN COMPOUNDS; PHASE TRANSFORMATIONS; SCATTERING; SILICON COMPOUNDS; SILICON OXIDES

Optional Information

Notes
Short note. For English translation see the journal Soviet Physics - Solid State (USA).