Published June 2018
| Version v1
Journal article
A First-Principles Study of the Thermodynamic Properties of GaAs under Intense Electronic Excitation
Creators
- 1. Zhengzhou University of Light Industry, Zhengzhou (China)
- 2. XuJi Electric CO., LTD, Xuchang (China)
- 3. Sichuan University, Chengdu (China)
Description
In this paper, we present the phonon dispersion curves of Gallium arsenide (GaAs) at different electronic temperatures. Based on the phonon spectra, we further investigated the thermodynamic properties of GaAs under intense electronic excitation. The phonon entropy, phonon heat capacity and phonon contribution to the Helmholtz free energy and the internal energy as functions of temperature at different electronic temperatures are calculated. A sudden change in the phonon entropy-temperature curve from Te = 1.25 to 1.5 eV provides an indication of GaAs undergoing a phase transition from a solid to a liquid. This can be considered as collateral evidence for the non-thermal melting of GaAs under electronic excitation.
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 72
- Journal Issue
- 11
- Series
- 30 refs, 5 figs, 1 tab
- Journal Page Range
- p. 1326-1336
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 50064406
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPUTER CALCULATIONS; DISPERSIONS; EXCITATION; HEAT; MELTING; PHONONS; SPECTRA; THERMODYNAMIC PROPERTIES
- Descriptors DEC
- ENERGY; ENERGY-LEVEL TRANSITIONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; QUASI PARTICLES