Published June 2018 | Version v1
Journal article

A First-Principles Study of the Thermodynamic Properties of GaAs under Intense Electronic Excitation

  • 1. Zhengzhou University of Light Industry, Zhengzhou (China)
  • 2. XuJi Electric CO., LTD, Xuchang (China)
  • 3. Sichuan University, Chengdu (China)

Description

In this paper, we present the phonon dispersion curves of Gallium arsenide (GaAs) at different electronic temperatures. Based on the phonon spectra, we further investigated the thermodynamic properties of GaAs under intense electronic excitation. The phonon entropy, phonon heat capacity and phonon contribution to the Helmholtz free energy and the internal energy as functions of temperature at different electronic temperatures are calculated. A sudden change in the phonon entropy-temperature curve from Te = 1.25 to 1.5 eV provides an indication of GaAs undergoing a phase transition from a solid to a liquid. This can be considered as collateral evidence for the non-thermal melting of GaAs under electronic excitation.

Additional details

Publishing Information

Journal Title
Journal of the Korean Physical Society
Journal Volume
72
Journal Issue
11
Series
30 refs, 5 figs, 1 tab
Journal Page Range
p. 1326-1336
ISSN
0374-4884

INIS

Country of Publication
Korea, Republic of
Country of Input or Organization
Korea, Republic of
INIS RN
50064406
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPUTER CALCULATIONS; DISPERSIONS; EXCITATION; HEAT; MELTING; PHONONS; SPECTRA; THERMODYNAMIC PROPERTIES
Descriptors DEC
ENERGY; ENERGY-LEVEL TRANSITIONS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; QUASI PARTICLES